Investigation of thermal properties of chalcogenide-based phase-change materials using thermoreflectance method
Phase-change memory (PCM) is attracting attention as a next-generation non-volatile memory technology. Chalcogenide-based compounds such as Ge2Sb2Te5 (GST) are currently widely used as phase-change materials, characterized by their ability to quickly switch phase between amorphous and crystalline states upon controlled thermal excitation. PCM is expected to offer prospective gains in speed, device lifetime, and storage capacity compared to conventional flash memory.
Understanding the thermal properties of phase-change materials is important for designing high performance and reliable PCM devices. In particular, the effects of thermal boundary resistance and ballistic thermal transport should be carefully investigated when the thickness of the thin film material is comparable to the mean free path of the energy carriers, as these can affect device performance. Thermoreflectance method is expected to play an important role in the development of PCMs because they can measure a variety of thermal properties of thin-film materials.
What you will learn in this PapersPicks
PapersPicks "Investigation of thermal properties of chalcogenide-based phase-change materials using thermoreflectance method", available for download on this page, presents the following topics from the academic papers lisenced under a Creative Commons CC BY license.
- Measurement of thermal conductivity of GST films across phase transition upon heating and cooling using TDTR.
- Investigation of the effect of the atomic network in SeTe/SiTe on its thermal conductivity using TDTR.
- Determination of volumetric heat capacity for the amorphous and crystalline Ge2Sb2Se4Te (GSST) thin film using TDTR.
- Investigation of the effect of interfacial thermal resistance on thermal conductivity of GSST films with different thickness using TDTR.
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